elektronische bauelemente ssu90n04-02b n-ch enhancement mode power mosfet 162a, 40v, r ds(on) 2.3m ? 13-dec-2013 rev.a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 263 rohs compliant product a suffix of -c specifies halogen free description these miniature surface mount mosfets utilize a hig h cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features low r ds(on) provides higher efficiency and extends battery life . low thermal impedance copper leadframe dpak saves b oard space. fast switching speed. high performance trench technology. package information package mpq leader size to-263 0.8k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 40 v gate-source voltage v gs 20 v continuous drain current 1 t c =25c i d 162 a pulsed drain current 2 i dm 360 a continuous source current (diode conduction) 1 t c =25c i s 90 a total power dissipation t c =25c p d 234 w operating junction and storage temperature range t j , t stg -55~175 c thermal resistance rating maximum thermal resistance junction-ambient 3 r ja 43 c / w maximum thermal resistance junction-case r jc 0.64 c / w note: 1. calculated continuous current based on maximum allowable junction temperature. package limitation current is 120a 2. pulse width limited by maximum junction tempera ture 3. surface mounted on 1 x 1 fr4 board. 1 gate 3 source 2 drain millimeter millimeter ref. min. max. ref. min. max. a 4.00 4.85 c 2 1.10 1.45 b 0.68 1.00 b 2 1.34 ref l4 0.00 0.30 d 8.0 9.15 c 0.36 0.53 e 2.54 ref l3 1.50 ref l 14.6 15.85 l1 2.29 2.79 l2 1.27 ref e 9.60 10.45 1 11 1 2 22 2
elektronische bauelemente ssu90n04-02b n-ch enhancement mode power mosfet 162a, 40v, r ds(on) 2.3m ? 13-dec-2013 rev.a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1 - - v v ds = v gs, i d = 250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 20v - - 1 v ds = 32v, v gs = 0v zero gate voltage drain current i dss - - 25 a v ds = 32v, v gs = 0v, t j =55c on-state drain current 1 i d(on) 120 - - a v ds = 5v, v gs = 10v - - 2.3 v gs = 10v, i d = 45a drain-source on-resistance 1 r ds(on) - - 3 m v gs = 5.5v, i d = 44a forward transconductance 1 g fs - 35 - s v ds =15v, i d =20a diode forward voltage 1 v sd - 0.82 - v i s =45a, v gs = 0 v dynamic 2 input capacitance c iss - 24600 - output capacitance c oss - 1560 - reverse transfer capacitance c rss - 1470 - pf v gs =0 v ds =15v f =1.0mhz total gate charge q g - 138 - gate-source charge q gs - 52 - gate-drain charge q gd - 57 - nc v ds = 20v v gs = 5.5 v i d = 20a turn-on delay time t d(on) - 54 - rise time t r - 85 - turn-off delay time t d(off) - 254 - fall time t f - 86 - ns v ds = 20v i d = 20a v gen = 10 v r l = 1 r gen = 6 notes: 1. pulse test pulse width Q 300 s, duty cycle Q 2 . 2. guaranteed by design, not subject to production testing.
elektronische bauelemente ssu90n04-02b n-ch enhancement mode power mosfet 162a, 40v, r ds(on) 2.3m ? 13-dec-2013 rev.a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
elektronische bauelemente ssu90n04-02b n-ch enhancement mode power mosfet 162a, 40v, r ds(on) 2.3m ? 13-dec-2013 rev.a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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